500V, 20A MOSFET IRFP460 Datasheet, Pinouts

The IRFP460 MOSFET is an N-channel MOSFET. It is rated for a drain-source breakdown voltage of 500V and a continuous drain current of 20A. This MOSFET is a third-generation device designed with fast switching and low on-resistance in mind. Specifically, it has a maximum drain-source on-state resistance of 0.27 Ohms.

Basically this IRFP460 MOSFET is suitable for switching applications at high voltages making it ideal for use in switch mode power supplies, DC-to-DC converters, motor drivers, inverters, and other power conversion applications.

It can handle up to 80A pulses and can dissipate 280W of power if adequate cooling is provided.

IRFP460 MOSFET Main Characteristics

• Type: N-Channel
• Maximum Drain to Source Voltage: 500 Volts
• Maximum Drain to Source Current: 20 Amps
• Minimum Drain to Source Resistance = 0.27 Ohms

Pinout Details

Absolute Maximum Ratings

Parameter	Description	Value	Unit
I_D @ T_C = 25°C	Continuous Drain Current at 25°C	20	A
I_D @ T_C = 100°C	Continuous Drain Current at 100°C	13	A
I_DM	Pulsed Drain Current (short bursts)	80	A
P_D @ T_C = 25°C	Maximum Power Dissipation	280	W
Linear Derating Factor	Power dissipation reduction per °C above 25°C	2.2	W/°C
V_GS	Maximum Gate-to-Source Voltage	±20	V
E_AS	Single Pulse Avalanche Energy	960	mJ
I_AR	Avalanche Current (short duration)	20	A
E_AR	Repetitive Avalanche Energy	28	mJ
dv/dt	Peak Diode Recovery Rate	3.5	V/ns
T_J, T_STG	Operating & Storage Temperature Range	-55 to 150	°C
Soldering Temperature	Max soldering temperature (for 10s, 1.6mm from case)	300	°C
Mounting Torque	Recommended screw torque for mounting	10 (1.1)	lbf-in (N·m)

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Thermal Resistance

Parameter	Description	Typical Value	Max Value	Unit
R_θJC	Thermal resistance from junction to case	—	0.45	°C/W
R_θCS	Thermal resistance from case to sink (greased)	0.24	—	°C/W
R_θJA	Thermal resistance from junction to ambient	—	40	°C/W

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Electrical Characteristics (@ T_J = 25°C)

Parameter	Description	Min	Typ	Max	Unit
V_(BR)DSS	Drain-to-Source Breakdown Voltage	500	—	—	V
ΔV_(BR)DSS/ΔT_J	Breakdown Voltage Temp. Coefficient	—	0.63	—	V/°C
R_DS(on)	Static Drain-to-Source On-Resistance	—	—	0.27	Ω
V_GS(th)	Gate Threshold Voltage	2.0	—	4.0	V
g_fs	Forward Transconductance	13	—	—	S
I_DSS	Drain-to-Source Leakage Current	—	—	25	μA
I_GSS	Gate Leakage Current	—	—	±100	nA
Q_G	Total Gate Charge	—	—	210	nC
Q_GS	Gate-to-Source Charge	—	29	—	nC
Q_GD	Gate-to-Drain "Miller" Charge	—	110	—	nC
t_d(on)	Turn-On Delay Time	—	18	—	ns
t_r	Rise Time	—	59	—	ns
t_d(off)	Turn-Off Delay Time	—	110	—	ns
t_f	Fall Time	—	58	—	ns
L_D	Internal Drain Inductance	—	5.0	—	nH
L_S	Internal Source Inductance	—	13	—	nH
C_iss	Input Capacitance	—	4200	—	pF
C_oss	Output Capacitance	—	870	—	pF
C_rss	Reverse Transfer Capacitance	—	350	—	pF

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Source-Drain Ratings and Body Diode Characteristics

Parameter	Description	Min	Typ	Max	Unit
I_S	Continuous Source Current (Body Diode)	—	—	20	A
I_SM	Pulsed Source Current (Body Diode)	—	—	80	A
V_SD	Diode Forward Voltage	—	—	1.8	V
t_rr	Reverse Recovery Time	570	—	860	ns
Q_rr	Reverse Recovery Charge	5.7	—	8.6	μC
t_on	Forward Turn-On Time	Intrinsic turn-on time is negligible	—	—	—

Source: IRF MOSFETs