IRFZ44 Datasheet [55V 49 Amp N-channel MOSFET]

The IRFZ44 is a popular N-channel power MOSFET designed for high current applications. Here is a detailed datasheet of the IRFZ44 MOSFET:

General Information:

• Manufacturer: International Rectifier (now part of Infineon Technologies)
• Model: IRFZ44
• Type: N-channel power MOSFET
• Package: TO-220AB

Pinout Configuration:

The following shows the pinout configuration for the MOSFET IRFZ44:

Electrical Characteristics:

• Drain-Source Voltage (VDS): 55V
• Continuous Drain Current (ID): 49A @ 25°C, 35A @ 100°C
• Maximum Power Dissipation (PD): 94W @ 25°C
• Gate-Source Voltage (VGS): ±20V
• Drain-Source On-Resistance (RDS(on)): 17.5mΩ @ VGS=10V, ID=27A
• Gate Threshold Voltage (VGS(th)): 2V to 4V
• Input Capacitance (Ciss): 1320pF @ VDS=25V, VGS=0V, f=1MHz
• Output Capacitance (Coss): 310pF @ VDS=25V, VGS=0V, f=1MHz
• Reverse Transfer Capacitance (Crss): 225pF @ VDS=25V, VGS=0V, f=1MHz
• Total Gate Charge (Qg): 47nC @ VGS=10V, ID=27A
• Gate-Source Charge (Qgs): 7nC @ VGS=10V, ID=27A
• Gate-Drain Charge (Qgd): 12nC @ VGS=10V, ID=27A

Thermal Characteristics:

• Thermal Resistance, Junction-to-Ambient (RθJA): 62°C/W
• Thermal Resistance, Junction-to-Case (RθJC): 1.5°C/W
• Operating Junction Temperature Range (TJ): -55°C to 175°C
• Storage Temperature Range (TSTG): -55°C to 175°C

Features:

• Low RDS(on) for high efficiency
• Fast switching speed for improved performance
• High current handling capability
• Low gate drive requirements
• High input impedance
• Avalanche energy rated
• RoHS compliant

Applications:

The MOSFET IRFZ44 is commonly used for the following applications:

• DC-DC converters
• DC to AC 50 Hz, 60 Hz Inverters
• Switching power supplies
• Motor control
• Solenoid and relay drivers
• High frequency inverters
• Class D audio amplifiers
• Electronic ballasts
• Battery chargers
• Welding equipment

Inverter circuit using IRFZ44

Conclusion

Overall, the IRFZ44 MOSFET is a high-performance, reliable device that can be used in a wide range of applications. Its low RDS(on), fast switching speed, and high current handling capability make it an ideal choice for power electronics applications.