The IRFZ44 is a popular N-channel power MOSFET designed for high current applications. Here is a detailed datasheet of the IRFZ44 MOSFET:
General Information:
- Manufacturer: International Rectifier (now part of Infineon Technologies)
- Model: IRFZ44
- Type: N-channel power MOSFET
- Package: TO-220AB
Pinout Configuration:
The following shows the pinout configuration for the MOSFET IRFZ44:
Electrical Characteristics:
- Drain-Source Voltage (VDS): 55V
- Continuous Drain Current (ID): 49A @ 25°C, 35A @ 100°C
- Maximum Power Dissipation (PD): 94W @ 25°C
- Gate-Source Voltage (VGS): ±20V
- Drain-Source On-Resistance (RDS(on)): 17.5mΩ @ VGS=10V, ID=27A
- Gate Threshold Voltage (VGS(th)): 2V to 4V
- Input Capacitance (Ciss): 1320pF @ VDS=25V, VGS=0V, f=1MHz
- Output Capacitance (Coss): 310pF @ VDS=25V, VGS=0V, f=1MHz
- Reverse Transfer Capacitance (Crss): 225pF @ VDS=25V, VGS=0V, f=1MHz
- Total Gate Charge (Qg): 47nC @ VGS=10V, ID=27A
- Gate-Source Charge (Qgs): 7nC @ VGS=10V, ID=27A
- Gate-Drain Charge (Qgd): 12nC @ VGS=10V, ID=27A
Thermal Characteristics:
- Thermal Resistance, Junction-to-Ambient (RθJA): 62°C/W
- Thermal Resistance, Junction-to-Case (RθJC): 1.5°C/W
- Operating Junction Temperature Range (TJ): -55°C to 175°C
- Storage Temperature Range (TSTG): -55°C to 175°C
Features:
- Low RDS(on) for high efficiency
- Fast switching speed for improved performance
- High current handling capability
- Low gate drive requirements
- High input impedance
- Avalanche energy rated
- RoHS compliant
Applications:
The MOSFET IRFZ44 is commonly used for the following applications:
- DC-DC converters
- DC to AC 50 Hz, 60 Hz Inverters
- Switching power supplies
- Motor control
- Solenoid and relay drivers
- High frequency inverters
- Class D audio amplifiers
- Electronic ballasts
- Battery chargers
- Welding equipment
Inverter circuit using IRFZ44
Conclusion
Overall, the IRFZ44 MOSFET is a high-performance, reliable device that can be used in a wide range of applications. Its low RDS(on), fast switching speed, and high current handling capability make it an ideal choice for power electronics applications.